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 NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.
Features http://onsemi.com
Preferred Devices
* * * * * * * * * * *
Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 3 A Excellent Gain Linearity High BVCEO High Frequency These are Pb-Free Devices Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwith
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS
MARKING DIAGRAM
Benefits
NJWxxxG AYWW TO-3P CASE 340AB
Applications
* High-End Consumer Audio Products *
Home Amplifiers Home Receivers Professional Audio Amplifiers Theater and Stadium Sound Systems Public Address Systems (PAs)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 250 5.0 250 15 30 1.5 150 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts C
xxxx G A Y WW
= 0281 or 0302 = Pb-Free Package = Assembly Location = Year = Work Week
ORDERING INFORMATION
Device NJW0281G NJW0302G Package TO-3P (Pb-Free) TO-3P (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail
MAXIMUM RATINGS
Preferred devices are recommended choices for future use and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
(c) Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
Publication Order Number: NJW0281/D
NJW0281G (NPN) NJW0302G (PNP)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Symbol RJC Value 0.83 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Collector Cutoff Current (VCB = 250 V, IE = 0) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 3.0 A, VCE = 5.0 V) Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 0.5 A) Base-Emitter On Voltage (IC = 5.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, ftest = 1.0 MHz) fT Cob 30 400 MHz pF hFE 75 75 75 VCE(sat) VBE(on) 150 150 150 1.0 1.2 V V VCEO(sus) ICBO IEBO 250 10 5.0 V mA mA Symbol Min Max Unit
160 PD, POWER DISSIPATION (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 IC, COLLECTOR CURRENT (A)
100 1.0 ms 10 100 ms 1 DC 0.1 5.0 ms 10 ms
0.01 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
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2
NJW0281G (NPN) NJW0302G (PNP)
500 VCE = 5.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100C 100 -25C 25C 500 VCE = 5.0 V 100C 100 -25C 25C
10 0.05 0.1
1
10
50
10 0.05 0.1
1
10
50
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. NJW0281G DC Current Gain
Figure 4. NJW0302G DC Current Gain
VBE(on), BASE-EMITTER VOLTAGE (V)
VCE = 5.0 V 1.2 1 -25C 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
VBE(on), BASE-EMITTER VOLTAGE (V)
1.4
2.4 VCE = 5.0 V 1.9
1.4
25C 100C
0.9
-25C 100C 25C
0.4 -0.1 0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 5. NJW0281G Base-Emitter Voltage
Figure 6. NJW0302G Base-Emitter Voltage
10 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB= 10
10 IC/IB= 10
1 100C 25C 0.1 -25C
1
100C 0.1 25C
0.01 0.01
0.1
1
10
100
0.01 0.01
-25C 0.1 1 10 IC, COLLECTOR CURRENT (A) 100
IC, COLLECTOR CURRENT (A)
Figure 7. NJW0281G Saturation Voltage
Figure 8. NJW0302G Saturation Voltage
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3
NJW0281G (NPN) NJW0302G (PNP)
60 fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 50 40 30 20 25C 10 0 0.01 fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE= 5.0 V 70 60 50 40 30 20 10 0 0.01 25C VCE= 5.0 V
0.1
1
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 9. NJW0281G Current Gain Bandwidth Product
Figure 10. NJW0302G Current Gain Bandwidth Product
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4
NJW0281G (NPN) NJW0302G (PNP)
PACKAGE DIMENSIONS
TO-3P-3LD CASE 340AB-01 ISSUE A
A B
4
B Q
SEATING PLANE
C E
U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20
A
L
(3) P K
1 2 3 3X
D 0.25
M
AB
S
H J
F W
G
G
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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NJW0281/D


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